Publications

In the design of high-entropy alloys (HEAs) with desired properties, identifying the effects of elements plays an important role. HEAs with eutectic microstructure can be obtained by judiciously modifying the alloy compositions. In this study, the effect of Nb addition to FeCoNiCuNbx (x = 0.5, 5, 7.5, 11.6, 15) alloys was studied by varying the Nb concentration (at.%). FeCoNiCuNb0.5 HEA shows liquid phase separation to form Cu-rich and FeCoNiCu-rich phases. Detailed solidification paths are proposed for these alloys, which show eutectic, peritectic, and pseudo quasi-peritectic reactions. Increasing Nb content promotes the liquid phase separation tendency and causes the formation of Cu-rich spheres. The effect of Nb on the FeCoNiCu-rich phase was studied based on the nanoindentation and correlated with nanohardness. The compressive deformation properties of these alloys are studied at room temperature and high temperature and correlated with microstructure. Fractography results show the mode of fracture and are correlated with the microstructure obtained.

A eutectic high-entropy alloy with seven components (Fe, Ni, Cr, V, Co, Mn, and Nb) was designed via the melt route guided by CALPHAD predictions. Configurational entropy estimated for the two-phase microstructure qualifies it to be referred to as a high-entropy alloy. When the Nb content exceeded 9.7 at. pct, the microstructure changed from hypoeutectic with primary face-centered cubic phase to hypereutectic with primary Laves phase.

Femtosecond laser ablation of the moly-chrome deposited piston ring and the influence of laser fluence and number of laser pulses on dimple morphology and geometry were analysed. The increase of laser fluence and pulse numbers beyond 8.4 J/cm2 affected the dimple surface by inducing severe cracks due to heat accumulation. Based on the experimental investigation, the ablation threshold for moly-chrome film was found to be 0.36 J/cm2. Textured surface was formed on the moly-chrome film with laser fluence near the ablation threshold and the tribological characteristics were studied. The piston ring surface was textured with dimple diameter of 100 μm and dimple aspect ratio of 0.2. Effect of different dimple area ratios, such as 2%, 16% and 38% were analysed by reciprocating type tribology testing. The textured surface with 16% dimple area ratio showed a reduction in friction compared to the plain and the remaining textured piston rings.

Cubic silicon carbide (3C-SiC) films were grown by pulsed laser deposition (PLD) on magnesium oxide [MgO (100)] substrates at a substrate temperature of 800°C. Besides, p-type SiC was prepared by laser assisted doping of Al in the PLD grown intrinsic SiC film. The SiC phases, in the grown thin films, were confirmed by x-ray diffraction (XRD), Si–C bond structure is identified by Fourier-transform infrared spectroscopy spectrum analysis. Measurements based on the XRD and Raman scattering techniques confirmed improvement in crystallization of 3C-SiC thin films with the laser assisted doping. The studies on I–V characteristics by two probe technique, elemental analysis by energy dispersion spectrum, binding energy by x-ray photoelectron spectroscopy and carrier concentration by Hall effect, ensured Al doping in SiC thin film. From the UV–visible NIR spectroscopic analysis, the optical bandgap of the PLD grown 3C-SiC was obtained. Numerical analysis of temperature and carrier concentration distribution is simulated to understand the mechanism of laser assisted doping.

Silicon carbide (SiC) thin films were grown by pulsed laser deposition (PLD) on Si (1 0 0) substrates at a substrate temperature of 800 °C. Besides, laser annealing was performed on the post deposited intrinsic amorphous SiC films using Nd3+:YAG 355 nm laser in the Ar environment. The laser-annealed samples showed the crystalline characteristics. Crystalline characteristics of PLD grown, laser annealed samples were identified by X-ray diffraction (XRD), Raman analysis. Numerical analysis performed on SiC/Si interface to investigate the temperature distribution, to understand the mechanism of laser assisted annealing.